The working principle of diodes is told by Quanyouxing Technology Industrial Co., Ltd.!

 Diode working principle  Diode working principle (forward conduction, reverse non-conducting)  Crystal diode is a p-n formed by p-type semiconductor and n-type semiconductor When there is no applied voltage, the diffusion current caused by the difference in carrier concentration on both sides of the p-n junction is equal to the drift current caused by the self-built electric field. in electrical equilibrium.  

When there is a forward voltage bias in the outside world, the mutual suppression of the external electric field and the self-built electric field increases the diffusion current of the carriers and causes the forward current. (This is also the reason for conduction) When there is a reverse voltage bias outside, the external electric field and the self-built electric field are further strengthened, forming a reverse saturation current independent of the reverse bias voltage value within a certain reverse voltage range. (This is also the reason for non-conductivity) The crystal diode is a p-n junction formed by a p-type semiconductor and an n-type semiconductor. A space charge layer is formed on both sides of the interface, and a self-built electric current is built when there is no external voltage. , because the diffusion current caused by the difference in carrier concentration on both sides of the p-n junction is equal to the drift current caused by the self-built electric field, it is in an electrical equilibrium state. When there is a forward voltage bias in the outside world, the mutual suppression of the external electric field and the self-built electric field increases the diffusion current of the carriers and causes the forward current.  

When there is a reverse voltage bias outside, the external electric field and the self-built electric field are further strengthened, forming a reverse voltage independent of the reverse bias voltage value within a certain reverse voltage range. towards the saturation current I0.  When the applied reverse voltage is high to a certain level, the electric field strength in the space charge layer of the p-n junction reaches a critical value, resulting in a multiplication process of carriers, resulting in a large number of electron-hole pairs, resulting in a large reverse impact The breakdown current is called the breakdown phenomenon of the diode.